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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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46,200
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 6.2 A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.2 A | 1.5 Ohms | 46 nC | Enhancement | ||||||
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462
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6.2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 750 mOhms | Enhancement | CoolMOS | ||||||
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121
In-stock
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Toshiba | MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 6.2 A | 680 mOhms | 2.7 V to 3.7 V | 12 nC | Enhancement |