MOSFET - Kaimeite

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16 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
IRF540ZLPBF	1+ $1.140 10+ $0.968 100+ $0.743 500+ $0.657		PDF RFQ	3,200 In-stock	Infineon Technologies	MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC	20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	36 A	26.5 mOhms		42 nC	Enhancement
IRFSL4510PBF	1+ $1.770 10+ $1.500 100+ $1.200 500+ $1.060		PDF RFQ	1,816 In-stock	Infineon Technologies	MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262	20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	61 A	13.9 mOhms	4 V	58 nC	Enhancement
FDI045N10A_F102	1+ $3.980 10+ $3.380 100+ $2.930 250+ $2.780		PDF RFQ	435 In-stock	Fairchild Semiconductor	MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm	20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	120 A	3.8 mOhms	4 V	54 nC	Enhancement
IRFSL4010PBF	1+ $5.400 10+ $4.590 100+ $3.980 250+ $3.780		PDF RFQ	326 In-stock	Infineon Technologies	MOSFET MOSFT 100V 180A 4.7mOhm 143nC	20 V	Through Hole	TO-262-3			Tube	1 Channel	Si	N-Channel	100 V	180 A	3.9 mOhms		143 nC
IRLSL4030PBF	1+ $5.360 10+ $4.550 100+ $3.950 250+ $3.750		PDF RFQ	394 In-stock	Infineon Technologies	MOSFET MOSFT 100V 180A 4.3mOhm 87nC	16 V	Through Hole	TO-262-3			Tube		Si	N-Channel	100 V	180 A	4.5 mOhms		87 nC
HUF75639S3	1+ $2.590 10+ $2.200 100+ $1.760 500+ $1.540		PDF RFQ	340 In-stock	Fairchild Semiconductor	MOSFET TO-262	20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	56 A	25 mOhms			Enhancement	UltraFET
IRF3710LPBF	1+ $1.780 10+ $1.520 100+ $1.210 500+ $1.060		PDF RFQ	296 In-stock	Infineon Technologies	MOSFET MOSFT 100V 57A 23mOhm 86.7nC	20 V	Through Hole	TO-262-3			Tube	1 Channel	Si	N-Channel	100 V	57 A	23 mOhms		86.7 nC
IRFSL4310ZPBF	1+ $2.690 10+ $2.290 100+ $1.980 250+ $1.880		PDF RFQ	392 In-stock	IR / Infineon	MOSFET MOSFT 100V 127A 6mOhm 120nC	20 V	Through Hole	TO-262-3			Tube	1 Channel	Si	N-Channel	100 V	127 A	4.8 mOhms		120 nC
IRF3710ZLPBF	1+ $1.380 10+ $1.180 100+ $0.903 500+ $0.798		PDF RFQ	81 In-stock	Infineon Technologies	MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC	20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	59 A	18 mOhms		82 nC	Enhancement
AUIRFSL4310	1+ $3.960 10+ $3.360 100+ $2.910 250+ $2.770		PDF RFQ	54 In-stock	IR / Infineon	MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms	20 V	Through Hole	TO-262-3	- 55 C		Tube	1 Channel	Si	N-Channel	100 V	130 A	7 mOhms		170 nC	Enhancement
TK65G10N1,RQ	1+ $2.780 10+ $2.240 100+ $1.790 250+ $1.700 1000+ $1.290		PDF RFQ	70 In-stock	Toshiba	MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK	20 V	SMD/SMT	TO-262-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	100 V	136 A	3.8 mOhms	4 V	81 nC	Enhancement
FDI150N10	800+ $1.170 1600+ $0.962 3200+ $0.896 5600+ $0.862		PDF RFQ	880 In-stock	Fairchild Semiconductor	MOSFET 100V N-Channel PowerTrench	20 V	Through Hole	TO-262-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	100 V	57 A	12 mOhms				PowerTrench
IRFSL4410ZPBF		GET PRICE	PDF RFQ	8,622 In-stock	Infineon Technologies	MOSFET MOSFT 100V 97A 9mOhm 83nC	20 V	Through Hole	TO-262-3			Tube	1 Channel	Si	N-Channel	100 V	97 A	9 mOhms		83 nC
SQV120N10-3M8_GE3	500+ $1.970 1000+ $1.670 2500+ $1.590 5000+ $1.460	GET PRICE VIEW	PDF RFQ		Siliconix / Vishay	MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified	+/- 20 V	Through Hole	TO-262-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	100 V	120 A	0.003 Ohms	2.5 V	190 nC	Enhancement	TrenchFET
IRFSL4310PBF	1+ $4.230 10+ $3.600 100+ $3.120 250+ $2.960		PDF RFQ	297 In-stock	IR / Infineon	MOSFET MOSFT 100V 140A 7mOhm 170nC	20 V	Through Hole	TO-262-3			Tube	1 Channel	Si	N-Channel	100 V	140 A	5.6 mOhms		170 nC
AUIRFSL4310-306		GET PRICE VIEW	PDF RFQ		IR / Infineon	MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms	20 V	Through Hole	TO-262-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	100 V	130 A	7 mOhms	4 V	170 nC