- Rds On - Drain-Source Resistance :
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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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717
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/13A/QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 390 mOhms | Enhancement | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 11.6A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 11.6 A | 380 mOhms | CoolMOS | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 560V 7.6A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 600 mOhms | CoolMOS | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 560V 21A I2PAK-3 | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 190 mOhms | CoolMOS | |||||||||
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VIEW | STMicroelectronics | MOSFET N-CHANNEL 500 V 1.22 OHM - 4.4A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.4 A | 1.5 Ohms | Enhancement |