- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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815
In-stock
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STMicroelectronics | MOSFET N-Ch, 55V-0.005ohms 80A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | Enhancement | ||||||
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463
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 6.4 mOhms | 2 V | 43 nC | Enhancement | PowerTrench | |||
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559
In-stock
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IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | ||||||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET 60V 80a 0.0038 Ohms/VGS=10V | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | |||||
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946
In-stock
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STMicroelectronics | MOSFET N-Ch, 55V-0.0065ohms 80A | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement |
