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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQV120N06-4m7L_GE3
500+
$1.680
1000+
$1.420
2500+
$1.350
5000+
$1.240
VIEW
RFQ
Siliconix / Vishay MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified +/- 20 V Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 120 A 0.00378 Ohms 1.5 V 230 nC Enhancement  
SQV120N10-3M8_GE3
500+
$1.970
1000+
$1.670
2500+
$1.590
5000+
$1.460
VIEW
RFQ
Siliconix / Vishay MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified +/- 20 V Through Hole TO-262-3 - 55 C + 175 C   1 Channel Si N-Channel 100 V 120 A 0.003 Ohms 2.5 V 190 nC Enhancement TrenchFET
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