- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
71 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,085
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 3.1 mOhms | 96.3 nC | Enhancement | ||||||
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5,000
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 6.5mOhm 10Vgs 100A | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||||
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2,495
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.1 mOhms | 2 V | 95.4 nC | Enhancement | |||||
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1,718
In-stock
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Diodes Incorporated | MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 7.5 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||||
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4,220
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.6 A | 16 mOhms | 2.5 V | 17 nC | Enhancement | |||||
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2,300
In-stock
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Diodes Incorporated | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.4 mOhms | 1 V | 41.3 nC | Enhancement | |||||
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2,260
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 25V-30V P-Ch 36A 7.5Vgs 6324 | +/- 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 36 A | 5.7 mOhms | - 2.1 V | 126.2 nC | Enhancement | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.9 A | 3.7 mOhms | 2 V | 49.1 nC | Enhancement | |||||
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2,300
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 7.6 mOhms | 2 V | 41.9 nC | Enhancement | |||||
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2,157
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 30Vgss 6807pF 139nC | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13.2 A | 8.5 mOhms | - 1.6 V | 139 nC | Enhancement | PowerDI | ||||
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2,402
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 37 A | 12 mOhms | 1 V | 17 nC | Enhancement | |||||
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4,830
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 1.5 V | 47.5 nC | Enhancement | |||||
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3,930
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 DI5060-8 T&R 2.5K | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 2.5 V | 47.5 nC | Enhancement | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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3,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF | 20 V, 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.8 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | PowerDI | ||||
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12,500
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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5,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET 8V to 24V FET Access Point Min RDSon | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 14 mOhms | 1 V | 34 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.8 mOhms | 3 V | 96.3 nC | Enhancement | PowerDI | ||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET Low Rdson | POWERDI5060-8 | Reel | Si | |||||||||||||||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI |