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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 21A (Ta) | 3.5 mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | 3175pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.5 mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | 3175pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | onsemi | MOSFET 2P-CH 20V 3.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SOIC | 0 | 2500 | 2 P-Channel (Dual) | 900mW | Logic Level Gate | 20V | 3.8A | 70 mOhm @ 3.8A, 4.5V | 1V @ 250µA | 30nC @ 4.5V | 1120pF @ 10V | |||||||
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VIEW | onsemi | MOSFET DUAL N-CH 20V 8-SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Surface Mount | - | Obsolete | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 900mW | Logic Level Gate | 20V | 5.5A | 35 mOhm @ 5.5A, 4.5V | 1V @ 250µA | 30nC @ 4.5V | 760pF @ 10V |
