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- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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- Input Capacitance (Ciss) (Max) @ Vds :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 285 | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | STMicroelectronics | MOSFET P-CH 30V 10A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | STripFET™ H6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 2500 | P-Channel | - | 30V | 10A (Ta) | 12 mOhm @ 5A, 10V | 1V @ 250µA (Min) | 33nC @ 4.5V | 3350pF @ 25V | 4.5V, 10V | ±20V | 2.7W (Ta) | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 12V 7.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4085 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 12V | 7.8A | 24 mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 12V 7.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 12V | 7.8A | 24 mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 12V 7.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 12V | 7.8A | 24 mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V | |||||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 12V 7.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 12V | 7.8A | 24 mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V |
