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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Diodes Incorporated MOSFET N/P-CH 30V 2.9A/2.1A 8DFN 8-WDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (3x2) 3000 0 3000 N and P-Channel 1.7W Logic Level Gate 30V 2.9A, 2.1A 120 mOhm @ 2.5A, 10V 3V @ 250µA 3.9nC @ 10V 190pF @ 25V
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Diodes Incorporated MOSFET 2N-CH 20V 2.9A DFN 8-WDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (3x2) 0 0 3000 2 N-Channel (Dual) 1.7W Logic Level Gate 20V 2.9A 120 mOhm @ 4A, 4.5V 3V @ 250µA 3.1nC @ 4.5V 299pF @ 15V
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Diodes Incorporated MOSFET 2N-CH 30V 2.9A DFN 8-WDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (3x2) 6000 0 3000 2 N-Channel (Dual) 1.7W Logic Level Gate 30V 2.9A 120 mOhm @ 2.5A, 10V 3V @ 250µA 3.9nC @ 10V 190pF @ 25V
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