- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,880
In-stock
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STMicroelectronics | MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI | 20 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 160 mOhms | 4 V | 6.4 nC | ||||||
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588
In-stock
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Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 330 mOhms | Enhancement | |||||
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4,739
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 330 mOhms | 10 nC | Enhancement |
