- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,119
In-stock
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onsemi | MOSFET POWER MOSFET | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 10 A | 44 mOhms | - 1 V | 1.7 nC | |||||
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1,449
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.5 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | |||
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1,613
In-stock
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Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement |
