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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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828
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.6 A | 77 mOhms | 1.5 V | 10 nC | Enhancement | |||
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4,000
In-stock
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onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.5 V | 4.5 nC |
