- Manufacture :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,880
In-stock
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STMicroelectronics | MOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI | 20 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 160 mOhms | 4 V | 6.4 nC | ||||||
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2,778
In-stock
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onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement | |||
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639
In-stock
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STMicroelectronics | MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1 A | 1.5 Ohms | 4 V | 5.7 nC | |||||
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4,000
In-stock
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onsemi | MOSFET NFET SOT223 600V 6A 15OHM | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 0.25 A | 15 Ohms | 4 V | 4.9 nC | Enhancement |
