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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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7,990
In-stock
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onsemi | MOSFET 60V 3A N-Channel | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | Enhancement | |||||
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4,625
In-stock
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IXYS Integrated Circuits | MOSFET N-Ch Depletion Mode Vertical DMOS FET | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 800 V | 100 mA | 45 Ohms | Depletion | |||||
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1,886
In-stock
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onsemi | MOSFET NFET 60V 3A 0.120R | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 120 mOhms | ||||||
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917
In-stock
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IXYS Integrated Circuits | MOSFET 600V N-Channel Depletion-Mode FET | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 mA | 44 Ohms | Depletion | |||||
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4,000
In-stock
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onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.5 V | 4.5 nC | ||||
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VIEW | onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.1 V | 4.5 nC | Enhancement |
