Build a global manufacturer and supplier trusted trading platform.
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
GET PRICE
RFQ
3,000
In-stock
Texas instruments MOSFET P-CH 20V 1.6A 4DSBGA 4-UFBGA, DSBGA NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 4-DSBGA (1x1) 0 3000 P-Channel - 20V 1.6A (Ta) 47 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 478pF @ 10V 2.5V, 4.5V -6V 1W (Ta)
Default Photo
GET PRICE
RFQ
171,000
In-stock
Texas instruments MOSFET N-CH 12V 1.6A 4DSBGA 4-UFBGA, DSBGA NexFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 4-DSBGA (1x1) 0 3000 N-Channel - 12V 1.6A (Ta) 34 mOhm @ 1A, 4.5V 1.1V @ 250µA 2.9nC @ 4.5V 462pF @ 6V 1.8V, 4.5V ±8V 1.2W (Ta)
Page 1 / 1