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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 40V 195A D2PAK-7PIN TO-263-8, D²Pak (7 Leads + Tab), TO-263CA HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 1 N-Channel - 40V 195A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7437pF @ 25V 6V, 10V ±20V 231W (Tc)
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Infineon Technologies MOSFET N-CH 100V 166A TO263-7 TO-263-8, D²Pak (7 Leads + Tab), TO-263CA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 100V 166A (Tc) 3.2 mOhm @ 83A, 10V 3.8V @ 125µA 95nC @ 10V 6970pF @ 50V 6V, 10V ±20V 187W (Tc)
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Infineon Technologies MOSFET N-CH 100V 180A TO263-7 TO-263-8, D²Pak (7 Leads + Tab), TO-263CA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 100V 180A (Tc) 2.4 mOhm @ 90A, 10V 3.8V @ 183µA 138nC @ 10V 10200pF @ 50V 6V, 10V ±20V 250W (Tc)
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Infineon Technologies MOSFET N CH 40V 195A D2PAK-7PIN TO-263-8, D²Pak (7 Leads + Tab), TO-263CA HEXFET®, StrongIRFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK (7-Lead) 0 800 N-Channel - 40V 195A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7437pF @ 25V 6V, 10V ±20V 231W (Tc)
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