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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 650V 46A TO247-4 TO-247-4 CoolMOS™ C7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247 0 1 N-Channel - 650V 46A (Tc) 45 mOhm @ 24.9A, 10V 4V @ 1.25mA 93nC @ 10V 4340pF @ 400V 10V ±20V 227W (Tc)
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STMicroelectronics MOSFET N-CH 650V I2PAKFP TO-247-4 MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-247-4L 0 1 N-Channel - 650V 49A (Tc) 62 mOhm @ 24.5A, 10V 4V @ 250µA 93nC @ 10V 3900pF @ 100V 10V ±25V 358W (Tc)
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