- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 600V 52A TO247-4 | TO-247-4 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-4L | 0 | 1 | N-Channel | - | 600V | 52A (Tc) | 55 mOhm @ 26A, 10V | 4V @ 250µA | 91nC @ 10V | 3750pF @ 100V | 10V | ±25V | 350W (Tc) | |||
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In-stock
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STMicroelectronics | MOSFET N-CH 650V I2PAKFP | TO-247-4 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-4L | 0 | 1 | N-Channel | - | 650V | 49A (Tc) | 62 mOhm @ 24.5A, 10V | 4V @ 250µA | 93nC @ 10V | 3900pF @ 100V | 10V | ±25V | 358W (Tc) |
