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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET NCH 200V 72A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) - -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 800 N-Channel - 200V 72A (Tc) 22 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V 375W (Tc)
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1,062
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Infineon Technologies MOSFET N-CH 200V 72A D2-PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1 N-Channel - 200V 72A (Tc) 22 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V 375W (Tc)
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283
In-stock
Infineon Technologies MOSFET NCH 200V 72A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, HEXFET® Tube MOSFET (Metal Oxide) - -55°C ~ 175°C (TJ) Active D²PAK (TO-263AB) 0 1 N-Channel - 200V 72A (Tc) 22 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V 375W (Tc)
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RFQ
9,600
In-stock
Infineon Technologies MOSFET N-CH 200V 72A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 200V 72A (Tc) 22 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V 375W (Tc)
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