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- Current - Continuous Drain (Id) @ 25°C :
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- Input Capacitance (Ciss) (Max) @ Vds :
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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 61A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 0 | 50 | N-Channel | - | 55V | 61A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | ||||
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400
In-stock
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Texas instruments | 40-V N-CHANNEL NEXFET POWER MOS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DDPAK/TO-263-3 | 950 | 0 | 50 | N-Channel | - | 40V | 110A (Ta), 194A (Tc) | 2.6 mOhm @ 100A, 10V | 2.4V @ 250µA | 64nC @ 10V | 5940pF @ 20V | 4.5V, 10V | ±20V | 188W (Ta) |