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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 53A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 100V | 53A (Tc) | 16.5 mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | 3220pF @ 50V | 10V | ±20V | 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | D2PAK | 0 | 0 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
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800
In-stock
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Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 53A (Tc) | 16.5 mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | 10V | ±20V | 3.8W (Ta), 107W (Tc) | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 300V 53A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, MDmesh™ V | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 300V | 53A (Tc) | 40 mOhm @ 26.5A, 10V | 5V @ 250µA | 95nC @ 10V | 4240pF @ 100V | 10V | ±25V | 250W (Tc) |
