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Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.473
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RFQ
STMicroelectronics MOSFET N-CH 600V 11A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MDmesh™ II Plus Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D2PAK 0 1000 N-Channel - 600V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 17nC @ 10V 580pF @ 100V 10V ±25V 110W (Tc)
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RFQ
STMicroelectronics MOSFET N-CH 500V 11A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MDmesh™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete D2PAK 0 1000 N-Channel - 500V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 940pF @ 50V 10V ±25V 100W (Tc)
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Per Unit
$2.380
RFQ
1,000
In-stock
STMicroelectronics MOSFET N-CH 500V 11A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB FDmesh™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete D2PAK 0 1000 N-Channel - 500V 11A (Tc) 380 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 850pF @ 50V 10V ±25V 100W (Tc)
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