- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 25A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 55V | 25A (Tc) | 24.8 mOhm @ 15A, 10V | 4V @ 20µA | 41nC @ 10V | 1862pF @ 25V | 10V | ±20V | 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1110pF @ 100V | 10V | ±20V | 104.2W (Tc) | |||
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6,000
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | 104.2W (Tc) |
