- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 650V | 17.5A (Tc) | 190 mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | 1850pF @ 100V | 10V | ±20V | 151W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 650V | 17.5A (Tc) | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | 1850pF @ 100V | 10V | ±20V | 151W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 500V 26A | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, MDmesh™ DM2 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | - | 500V | 26A (Tc) | 120 mOhm @ 12.5A, 10V | 5V @ 250µA | 44nC @ 10V | 1850pF @ 100V | 10V | ±25V | 190W (Tc) |
