- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | TO-263 (D²Pak) | 0 | 450 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | 100W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 450 | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 64A D2PAK-5 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 450 | N-Channel | - | 30V | 64A (Tc) | 14 mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | 4.5V, 10V | ±16V | 3.1W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 140A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 30V | 140A (Tc) | 6 mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | 4.5V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 450 | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 170W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 87A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 450 | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | 79W (Tc) |
