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Part Status :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 180A TO263-7 TO-263-7, D²Pak (6 Leads + Tab) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) PG-TO263-7-3 0 1000 N-Channel - 60V 180A (Tc) 1.7 mOhm @ 100A, 10V 4V @ 200µA 270nC @ 10V 21900pF @ 25V 10V ±20V 250W (Tc)
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Infineon Technologies MOSFET N-CH 100V D2PAK-7 TO-263-7, D²Pak (6 Leads + Tab) OptiMOS™-5 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 100V 180A (Tc) 1.7 mOhm @ 100A, 10V 4.1V @ 270µA 195nC @ 10V 840pF @ 50V 10V ±20V 313W (Tc)
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Infineon Technologies MOSFET N-CH 100V 180A D2PAK-7 TO-263-7, D²Pak (6 Leads + Tab) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 100V 180A (Tc) 1.7 mOhm @ 100A, 10V 3.8V @ 279µA 210nC @ 10V 15600pF @ 50V 6V, 10V ±20V 375W (Tc)
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Infineon Technologies MOSFET N-CH 60V 180A TO263-7 TO-263-7, D²Pak (6 Leads + Tab) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TO263-7 0 1000 N-Channel - 60V 180A (Tc) 1.7 mOhm @ 100A, 10V 4V @ 196µA 275nC @ 10V 23000pF @ 30V 10V ±20V 250W (Tc)
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