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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 35A TO220-5 TO-263-5, D²Pak (4 Leads + Tab), TO-263BB TEMPFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete PG-TO220-5-62 0 1000 N-Channel Temperature Sensing Diode 55V 35A (Tc) 13 mOhm @ 19A, 10V 2V @ 130µA 130nC @ 10V 2660pF @ 25V 4.5V, 10V ±20V 170W (Tc)
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Infineon Technologies MOSFET N-CH 55V 35A TO220-5 TO-263-5, D²Pak (4 Leads + Tab), TO-263BB TEMPFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Active PG-TO263-5-2 0 1000 N-Channel Temperature Sensing Diode 55V 35A (Tc) 13 mOhm @ 19A, 10V 2V @ 130µA 130nC @ 10V 2660pF @ 25V 4.5V, 10V ±20V 170W (Tc)
BTS247Z
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Infineon Technologies MOSFET N-CH 55V 33A TO220-5 TO-263-5, D²Pak (4 Leads + Tab), TO-263BB TEMPFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Active PG-TO263-5-2 0 1000 N-Channel Temperature Sensing Diode 55V 33A (Tc) 18 mOhm @ 12A, 10V 2V @ 90µA 90nC @ 10V 1730pF @ 25V 4.5V, 10V ±20V 120W (Tc)
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