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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 86A IPAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 375 N-Channel - 30V 86A (Tc) 6.5 mOhm @ 15A, 10V 2.25V @ 250µA 26nC @ 4.5V 2330pF @ 15V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 20V 100A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete IPAK (TO-251) 0 6525 N-Channel - 20V 100A (Tc) 6.5 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V 2.5W (Ta), 120W (Tc)
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RFQ
Infineon Technologies MOSFET N-CH 30V 86A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 825 N-Channel - 30V 86A (Tc) 6.5 mOhm @ 15A, 10V 2.25V @ 250µA 26nC @ 4.5V 2330pF @ 15V 4.5V, 10V ±20V 79W (Tc)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 20V 100A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete IPAK (TO-251) 0 300 N-Channel - 20V 100A (Tc) 6.5 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V 2.5W (Ta), 120W (Tc)
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