- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 35A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 975 | N-Channel | - | 100V | 35A (Tc) | 28.5 mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | 1690pF @ 25V | 10V | ±20V | 91W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | IPAK (TO-251) | 0 | 750 | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 100V 35A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I-PAK | 0 | 3000 | N-Channel | - | 100V | 35A (Tc) | 28.5 mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | 1690pF @ 25V | 10V | ±20V | 91W (Tc) |
