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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 600V TO220-3 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 500 N-Channel Super Junction 600V 6.8A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V 26W (Tc)
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Infineon Technologies MOSFET N-CH 650V TO220-3 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel Super Junction 650V 7.2A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3nC @ 10V 328pF @ 100V 10V ±20V 68W (Tc)
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