- Vgs - Gate-Source Voltage :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
4,941
In-stock
|
Nexperia | MOSFET 20 V, complementary N/P-channel Trench | 8 V, 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 600 mA, 500 mA | 470 mOhms, 1.02 Ohms | 450 mV, - 950 mV | 700 pC, 2.1 nC | Enhancement | ||
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GET PRICE |
6,630
In-stock
|
Nexperia | MOSFET 60V dual N-channel Trench MOSFET | 20 V, 20 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 260 mA, 260 mA | 5.7 Ohms, 5.7 Ohms | 1.1 V | 1 nC, 1 nC | Enhancement | ||
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GET PRICE |
14,459
In-stock
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Nexperia | MOSFET 30V Dual N-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 590 mA | 670 mOhms | 450 mV | 1.05 mC | Enhancement |
