- Packaging :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 85A PQFN 5X6 | 8-PowerTDFN | HEXFET®, StrongIRFET™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 85A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 6V, 10V | ±20V | 78W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 22A TSDSON-8 | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 40V | 22A (Ta), 40A (Tc) | 2.35 mOhm @ 20A, 10V | 2V @ 250µA | 37nC @ 10V | 2630pF @ 20V | 4.5V, 10V | ±20V | 2.1W (Ta), 69W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 26A 8PQFN | 8-PowerTDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (5x6) | 0 | 1 | N-Channel | - | 40V | 26A (Ta), 85A (Tc) | 3.3 mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | 3720pF @ 25V | 4.5V, 10V | ±16V | 3.6W (Ta), 104W (Tc) |
