- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 25V 19A 8PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3.3x3.3), Power33 | 0 | 4000 | N-Channel | - | 25V | 19A (Ta) | 5.2 mOhm @ 20A, 10V | 2.35V @ 25µA | 18nC @ 10V | 1667pF @ 10V | 4.5V, 10V | ±20V | 2.8W (Ta), 34W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 25A PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | - | 0 | 4000 | N-Channel | - | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | 2.8W (Ta), 37W (Tc) |
