- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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436
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 2.4 mOhms | 4 V | 183 nC | Enhancement | ||||
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37
In-stock
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IXYS | MOSFET 260 Amps 55V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.6mOhms 160nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.1 mOhms | 4 V | 160 nC | |||||
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VIEW | IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 1.40 mOhm STripFET III 180A | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.4 mOhms | 4 V | 110 nC | ||||||||
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1,740
In-stock
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IR / Infineon | MOSFET 24V 1 N-CH HEXFET 1mOhm 180nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 Ohms | 4 V | 180 nC | Enhancement |