- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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59,130
In-stock
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Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 3.3 mOhms | 1.3 V to 2.3 V | 21 nC | Enhancement | ||||
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2,205
In-stock
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Toshiba | MOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 5.2 mOhms | 1.3 V to 2.3 V | 24 nC | Enhancement | |||||
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38
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 31 A | 12.6 mOhms | 2.3 V | 7.5 nC | Enhancement | |||||
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3,786
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 13 mOhms | 4 V | 19 nC | Enhancement | |||||
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4,872
In-stock
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Toshiba | MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 33 A | 11 mOhms | 2 V to 4 V | 15 nC | Enhancement | |||||
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4,459
In-stock
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Toshiba | MOSFET U-MOSVIII-H 30V 53A 24nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 35 mOhms | 1.3 V to 2.3 V | 24 nC | UMOSVIII | |||||
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2,679
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 6.8 mOhms | 2.3 V | 17 nC | Enhancement | |||||
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1,878
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 22W 630pF 37A 30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 10.2 mOhms | 2.3 V | 9.8 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 1.8 mOhms | 1.3 V to 2.3 V | 34 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 96 mOhms | 4 V | 7 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 9.9 A | 168 mOhms | 4 V | 7 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 50 mOhms | 4 V | 7 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch 30V 2230pF 40nC 2.5mOhm 85A 35W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 85 A | 2.1 mOhms | 1.3 V to 2.3 V | 40 nC | Enhancement |