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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSB013NE2LXI
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4,710
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Infineon Technologies MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS 20 V SMD/SMT WDSON-2-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 25 V 163 A 1.3 mOhms 1.2 V to 2 V 62 nC Enhancement OptiMOS
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