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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,498
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Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 15.5 mOhms | 700 mV | 8.6 nC | Enhancement | NexFET | ||
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83
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Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 6-DSBGA | 10 V | SMD/SMT | DSBGA-6 | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 15.5 mOhms |
