- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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2,904
In-stock
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Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.5 A | 20 mOhms | 850 mV | 3.9 nC | NexFET | |||
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976
In-stock
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Texas instruments | MOSFET 20V P-Ch NexFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 92 mOhms | - 0.8 V | 3.3 nC | ||||
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VIEW | Texas instruments | MOSFET PCh NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 56 mOhms | NexFET |
