- Transistor Polarity :
- Id - Continuous Drain Current :
-
- - 11 A (2)
- 10 A (3)
- 100 A (6)
- 104 A (1)
- 105 A (1)
- 12 A (3)
- 120 A (1)
- 128 A (1)
- 13 A (1)
- 14 A (2)
- 147 A (1)
- 15 A (1)
- 159 A (1)
- 16 A (3)
- 16.2 A (1)
- 17 A (1)
- 19 A (2)
- 20 A (2)
- 201 A (1)
- 21 A (2)
- 22 A (1)
- 25 A (1)
- 265 A (1)
- 27 A (2)
- 28 A (1)
- 29 A (1)
- 34 A (2)
- 35 A (2)
- 38 A (1)
- 40 A (5)
- 44 A (1)
- 49 A (1)
- 56 A (1)
- 63 A (1)
- 71 A (1)
- 80 A (2)
- 82 A (1)
- 85 A (1)
- 88 A (1)
- 89 A (1)
- 90 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.09 mOhms (1)
- 1.1 mOhms (1)
- 1.4 mOhms (1)
- 1.5 mOhms (1)
- 1.6 mOhms (1)
- 1.85 mOhms (1)
- 10.3 mOhms (1)
- 10.7 mOhms (1)
- 100 mOhms (1)
- 11.2 mOhms (1)
- 11.7 mOhms (1)
- 12.4 mOhms (2)
- 12.8 mOhms (1)
- 13 mOhms (1)
- 14.4 mOhms (1)
- 14.5 mOhms (1)
- 14.9 mOhms (1)
- 16.4 mOhms (2)
- 17.9 mOhms (1)
- 18 mOhms (1)
- 19.9 mOhms (1)
- 2.1 mOhms (1)
- 2.5 mOhms (1)
- 2.6 mOhms (1)
- 2.7 mOhms (1)
- 2.95 mOhms (1)
- 20 mOhms (1)
- 3.4 mOhms (1)
- 3.5 mOhms (1)
- 3.6 mOhms (1)
- 3.9 mOhms (1)
- 31 mOhms (1)
- 4.1 mOhms (1)
- 4.6 mOhms (1)
- 4.8 mOhms (2)
- 4.9 mOhms (1)
- 5.2 mOhms (1)
- 5.5 mOhms (1)
- 5.6 mOhms (3)
- 5.7 mOhms (1)
- 5.9 mOhms (1)
- 55 mOhms (1)
- 58 mOhms (1)
- 6 mOhms (2)
- 6.3 mOhms (1)
- 6.7 mOhms (2)
- 6.8 mOhms (1)
- 7.2 mOhms (1)
- 7.7 mOhms (1)
- 8 mOhms (1)
- 8.7 mOhms (1)
- 9 mOhms (2)
- 9.6 mOhms (1)
- 9.9 mOhms (2)
- 950 uOhms (1)
- 970 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (2)
- 11 nC (1)
- 110 nC (1)
- 111 nC (1)
- 127 nC (1)
- 13 nC (3)
- 143 nC (1)
- 15 nC (1)
- 16 nC (2)
- 17 nC (2)
- 18 nC (1)
- 20 nC (2)
- 21 nC (1)
- 23 nC (1)
- 26 nC (2)
- 29 nC (1)
- 30 nC (1)
- 31 nC (2)
- 32 nC (1)
- 33 nC (1)
- 34 nC (1)
- 36 nC (2)
- 37 nC (1)
- 39 nC (1)
- 4.7 nC (1)
- 40 nC (3)
- 41 nC (2)
- 44 nC (1)
- 48 nC (1)
- 5.4 nC (3)
- 50 nC (1)
- 52 nC (1)
- 55 nC (1)
- 59 nC (1)
- 65 nC (2)
- 69 nC (1)
- 7.1 nC (1)
- 7.3 nC (1)
- 7.7 nC (1)
- 70 nC (1)
- 73 nC (2)
- 77 nC (2)
- 8.3 nC (2)
- 9.3 nC (1)
- 90 nC (1)
- 92 nC (1)
- 94 nC (1)
- Tradename :
65 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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1,010
In-stock
|
Fairchild Semiconductor | MOSFET PT9 30V/12V Nch PowerTrench SyncFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 30 V | 38 A | 1.09 mOhms | 3 V | 143 nC | Enhancement | ||||||
|
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5,610
In-stock
|
IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 147 A | 3.6 mOhms | 3.7 V | 110 nC | StrongIRFET | ||||
|
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5,095
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 88 A | 9.9 mOhms | 2.5 V | 44 nC | |||||
|
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3,247
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 14.9 mOhms | 2 V to 4 V | 40 nC | Enhancement | ||||
|
|
5,028
In-stock
|
Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||||
|
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6,236
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | ||||
|
|
4,658
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | |||||
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|
GET PRICE |
4,992
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | ||||
|
|
10,792
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 14.4 mOhms | 4 V | 23 nC | |||||
|
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3,557
In-stock
|
IR / Infineon | MOSFET 40V 85A 2.4mOhm 92nC STrongIRFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 159 A | 2.7 mOhms | 3.9 V | 92 nC | Enhancement | StrongIRFET | |||
|
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7,239
In-stock
|
Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 6 mOhms | 3.7 V | 73 nC | StrongIRFET | ||||
|
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3,178
In-stock
|
IR / Infineon | MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 100 mOhms | 37 nC | Enhancement | |||||
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3,835
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 201 A | 1.4 mOhms | 2.2 V | 70 nC | Enhancement | StrongIRFET | |||
|
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6,413
In-stock
|
IR / Infineon | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.1 mOhms | 1.35 V to 2.35 V | 30 nC | Enhancement | ||||
|
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3,416
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | ||||
|
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1,946
In-stock
|
IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 44 A | 1.1 mOhms | 1.6 V | 77 nC | |||||
|
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4,739
In-stock
|
Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | ||||
|
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5,352
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11.7 mOhms | - 1.8 V | 16 nC | Enhancement | ||||
|
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1,160
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 265 A | 950 uOhms | 3.9 V | 127 nC | Enhancement | StrongIRFET | |||
|
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29,180
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 104 A | 3.9 mOhms | 1.35 V to 2.35 V | 34 nC | Enhancement | StrongIRFET | |||
|
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552
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 17 A | 5.9 mOhms | 4 V | 65 nC | Enhancement | ||||
|
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2,667
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.8 mOhms | 1.8 V | 31 nC | Enhancement | ||||
|
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3,996
In-stock
|
Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||
|
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41,120
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 4.6 mOhms | 1.8 V | 41 nC | |||||
|
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13,000
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.4mOhms 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 29 A | 17.9 mOhms | 1.35 V to 2.35 V | 5.4 nC | Enhancement | ||||
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840
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | |||||
|
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5,272
In-stock
|
Infineon Technologies | MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 6.8 mOhms | 1.7 V | 26 nC | Enhancement | ||||
|
|
4,000
In-stock
|
Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.2 mOhms | 1.8 V | 15 nC | SmallPowIR | ||||
|
|
2,408
In-stock
|
IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | |||||
|
|
2,962
In-stock
|
Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 7.7 mOhms | 1.8 V | 20 nC | SmallPowIR |
