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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,340
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | |||
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7,069
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4 V | 39 nC | Enhancement | Directfet | ||
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2,469
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 12 mOhms | 4 V | 22 nC | Enhancement | Directfet | ||
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4,800
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 17.5 mOhms | 22 nC | Enhancement | Directfet | |||
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965
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 67 A | 9 mOhms | 24 nC | Enhancement | Directfet | |||
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VIEW | IR / Infineon | MOSFET 200V 1 x N-CH HEXFET for Digital Audio | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 19 A | 85 mOhms | 26 nC | Enhancement | Directfet | ||||
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72
In-stock
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IR / Infineon | MOSFET MOSFT 150V 35A 35mOhm 39nC Qg | 20 V | SMD/SMT | DirectFET-MZ | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4.9 V | 39 nC |
