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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SISA96DN-T1-GE3
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RFQ
6,000
In-stock
Siliconix / Vishay MOSFET N-Channel 30V PowerPAK 1212-8 + 20 V, - 16 V SMD/SMT PowerPAK-1212-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 16 A 0.0073 Ohms 1 V 31 nC Enhancement  
SQ7414AEN-T1_GE3
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RFQ
4,132
In-stock
Siliconix / Vishay MOSFET N-Channel 60V AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-1212-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 16 A 0.022 Ohms 1.5 V 24 nC Enhancement TrenchFET
SQS484EN-T1_GE3
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RFQ
2,157
In-stock
Vishay Semiconductors MOSFET 40V 16A 62W AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-1212-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 16 A 0.008 Ohms 1.5 V 39 nC Enhancement TrenchFET
SQS482EN-T1_GE3
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RFQ
2,996
In-stock
Vishay Semiconductors MOSFET 30V 16A 62W AEC-Q101 Qualified +/- 20 V SMD/SMT PowerPAK-1212-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 16 A 0.007 Ohms 1.5 V 39 nC Enhancement TrenchFET
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