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Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STH275N8F7-2AG
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STMicroelectronics MOSFET Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripF... 20 V SMD/SMT H2PAK-2 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 180 A 1.7 mOhms 2.5 V 193 nC Enhancement
STH290N4F6-2AG
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STMicroelectronics MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... 20 V SMD/SMT H2PAK-2 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 180 A 1.7 mOhms 2 V 115 nC Enhancement
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