- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
4,775
In-stock
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.5 mOhms | 1.1 V | 7.5 nC | Enhancement | |||
|
|
GET PRICE |
2,879
In-stock
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF | 6 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 61 mOhms | - 0.3 V to - 1 V | 37.6 nC | |||
|
|
GET PRICE |
5,552
In-stock
|
Toshiba | MOSFET Small Signal MOSFET V=30V, I-10A | - 25 V / + 20 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 32 mOhms | - 2.2 V | 13.6 nC | |||||
|
|
GET PRICE |
4,411
In-stock
|
Toshiba | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | 8 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 15.3 mOhms | - 1 V | 29.9 nC | Enhancement | ||
|
|
GET PRICE |
1,345
In-stock
|
Toshiba | MOSFET Small-signal MOSFET Vdss=-12V, Id=-10A | UDFN6B-6 | Reel | Si | ||||||||||||||
|
|
GET PRICE |
2,557
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | +/- 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 26 mOhms | 1.3 V | 4.8 nC | Enhancement | |||
|
|
GET PRICE |
2,629
In-stock
|
Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 89.6 mOhms | |||||||
|
|
GET PRICE |
9,000
In-stock
|
Toshiba | MOSFET Small-signal MOSFET Power MGMT switch | +/- 10 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 14 A | 6.5 mOhms | - 1 V | 47 nC | Enhancement | |||
|
|
GET PRICE |
3,000
In-stock
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.9 mOhms | 1.4 V | 7.5 nC | Enhancement | |||
|
|
VIEW | Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 60.5 mOhms |
