- Rds On - Drain-Source Resistance :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,840
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | ||
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GET PRICE |
2,528
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 3.5 mOhms | 1.1 V | 35 nC | Enhancement | NexFET | ||
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GET PRICE |
17,600
In-stock
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Texas instruments | MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 7.8 mOhms | 2.2 V | 35 nC | Enhancement |
