- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,146
In-stock
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Toshiba | MOSFET Small Sig FET 1.5V Low RDS 250mOhm | CST3B-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 103 mOhms | |||||||||
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10,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V | 1.8 V | SMD/SMT | CST3B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 250 mOhms | 1.2 V | 1.1 nC | Enhancement |
