- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
500
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 1.3 mOhm typ., 180 A STripF... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.7 mOhms | 2 V | 115 nC | Enhancement | ||
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GET PRICE |
1,000
In-stock
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STMicroelectronics | MOSFET | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.1 mOhms | 4 V | 120 nC | Enhancement | ||
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GET PRICE |
1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.8 mOhms | 2 V | 55 nC | Enhancement | |||
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GET PRICE |
1,000
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 60 V, 0.95 mOhm typ., 180 A STrip... | H2PAK-6 | Si | |||||||||||||||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET | H2PAK-6 | Si | ||||||||||||||||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET | H2PAK-6 | Si |
