Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
DMP2100UFU-7
GET PRICE
RFQ
2,602
In-stock
Diodes Incorporated MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W +/- 10 V, +/- 10 V SMD/SMT U-DFN2030-6 - 55 C + 150 C Reel 2 Channel Si P-Channel - 20 V, - 20 V - 5.7 A, - 5.7 A 25 mOhms, 25 mOhms - 1.4 V, - 1.4 V 21.4 nC, 21.4 nC Enhancement
DMN2028UFU-7
GET PRICE
RFQ
3,000
In-stock
Diodes Incorporated MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 40A     U-DFN2030-6     Reel 2 Channel Si N-Channel            
DMN2014LHAB-7
GET PRICE
RFQ
9,000
In-stock
Diodes Incorporated MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF 12 V SMD/SMT U-DFN2030-6 - 55 C + 150 C Reel 2 Channel Si N-Channel 20 V 9 A 13 mOhms 0.71 V 16 nC Enhancement
DMN2016LHAB-7
GET PRICE
RFQ
3,000
In-stock
Diodes Incorporated MOSFET DUAL N-CH MOSFET 20V     U-DFN2030-6     Reel 2 Channel Si N-Channel 20 V 7.5 A 30 mOhms      
DMP2100UFU-13
VIEW
RFQ
Diodes Incorporated MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W     U-DFN2030-6     Reel 2 Channel Si P-Channel            
DMN2028UFU-13
VIEW
RFQ
Diodes Incorporated MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 40A     U-DFN2030-6     Reel 2 Channel Si N-Channel            
Page 1 / 1