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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 35A TO220-5 TO-220-5 TEMPFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete P-TO220-5-43 0 500 N-Channel   Temperature Sensing Diode 55V 35A (Tc) 13 mOhm @ 19A, 10V 2V @ 130µA 130nC @ 10V 2660pF @ 25V 4.5V, 10V ±20V 170W (Tc)
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Infineon Technologies MOSFET N/P-CH 55V/30V 40A TO220 TO-220-5 OptiMOS™ Tube   Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TO220-5-13 0 500 N and P-Channel 69W, 96W Logic Level Gate 55V, 30V 40A 12 mOhm @ 20A, 10V 2.2V @ 40µA 123nC @ 10V 6100pF @ 25V      
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