- Rds On - Drain-Source Resistance :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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Infineon Technologies | MOSFET 20V Dual N-Channel HEXFET | 12 V | SMD/SMT | DirectFET-SA | - 40 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 15 A | 3.8 mOhms | 0.8 V | 54 nC | |||
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VIEW | Infineon Technologies | MOSFET 25V Dual Control FET in S- Can | SMD/SMT | DirectFET-SA | Reel | 2 Channel | Si | N-Channel | 25 V | 16 A | 4.5 mOhms | Directfet |
