- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
4,755
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 10 V | SMD/SMT | CST3C-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 250 mA | 20 Ohms | - 1 V | Enhancement | |||||
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GET PRICE |
631
In-stock
|
Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | CST3C-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 250 mA | 9 Ohms | 350 mV | 340 pC | Enhancement | ||
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GET PRICE |
10,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A | 20 V | SMD/SMT | CST3C-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement |
